s m d ty p e w w w . k e x i n . c o m . c n 1 m o s f e t feat ur es v d s ( v ) = - 12v i d = - 4.0a ( v g s = - 4.5v ) r d s ( o n ) 51m ( v g s = - 4.5v ) r d s ( o n ) 70m ( v g s = - 2.5v ) r d s ( o n ) 106m ( v g s = - 1.8v ) 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.gate 2.source 3.drain 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 g s d 2 3 1 a bs olut e max imum r at ings ta = 25 p ar am eter s y m bol 5 s ec s teady s tate uni t dr ai n- s our c e v ol tage v d s g ate- s our c e v ol tage v g s conti nuous dr ai n cur r ent t a = 25 - 4.0 - 3.2 t a = 70 - 3.3 - 2.6 p ul s ed dr ai n cur r ent i d m p ow er di s s i pati on t a = 25 1.25 0.75 t a = 70 0.8 0.48 t her m al res i s tanc e.j unc ti on- to- a m bi ent t 5 s ec s teady s tate t her m al res i s tanc e.j unc ti on- to- f oot r t h jf j unc ti on t em per atur e t j s tor age t em per atur e range t st g 100 166 50 150 - 55 to 150 w r t h ja - 12 8 i d v /w a - 15 p d p b? f r ee p ac k age m ay be a v ai l abl e. t he g ? s uffi x denotes a p b? f r ee lead f i ni s h p-cha nne l mo s f e t si2 3 3 5 ds-hf ( k i 2 3 3 5 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 2 m o s f e t e lec t r ic al c har ac t er is t ic s ta = 25 p ar am eter s y m bol t es t condi ti ons m i n t y p m ax uni t dr ai n- s our c e b r eak dow n v ol tage v d s s i d = - 250 a , v g s = 0v - 12 v v d s = - 9.6v , v g s = 0v - 1 v d s = - 9.6v , v g s = 0v , t j = 55 - 10 g ate- b ody l eak age c ur r ent i g s s v d s = 0v , v g s = 8v 100 na g ate t hr es hol d v ol tage v g s ( t h ) v d s = v g s i d = - 250 a - 0.45 - 1.0 v v g s = - 4.5v , i d = - 4.0a 51 v g s = - 2.5v , i d = - 3.5a 70 v g s = - 1.8v , i d = - 2a 106 v g s = - 4.5v , v d s = - 5v - 15 v g s = - 2.5v , v d s = - 5v - 6 f or w ar d t r ans c onduc tanc e * 1 g fs v d s = - 5v , i d = - 4.0a 7 s input capac i tanc e c i ss 1225 o utput capac i tanc e c o ss 260 rev er s e t r ans fer capac i tanc e c r ss 130 t otal g ate char ge q g 9 15 g ate s our c e char ge q g s 1.9 g ate dr ai n char ge q g d 1.5 t ur n- o n del ay t i m e t d ( o n ) 13 20 t ur n- o n ri s e t i m e t r 15 25 t ur n- o ff del ay t i m e t d ( o f f ) 50 70 t ur n- o ff f al l t i m e t f 19 35 m ax i m um b ody - di ode conti nuous cur r ent i s - 1.6 a di ode f or w ar d v ol tage v s d i s = - 1.6a ,v g s = 0v - 1.2 v o n s tate dr ai n c ur r ent * 1 i d ( o n ) a z er o g ate v ol tage dr ai n cur r ent i d s s a m r d s ( o n ) s tati c dr ai n- s our c e o n- res i s tanc e * 1 pf nc v g s = - 4.5v , v d s = - 6v , r l = 6 ,r g e n = 6 i d = - 1.0a ns v g s = 0v , v d s = - 6v , f= 1m hz v g s = - 4.5v , v d s = - 6v , i d = - 4.0a * 1p ul s e tes t: p w 300u s duty c y c l e 2% . mar k ing m ar k i ng e 5* f p-cha nne l mo s f e t si2 3 3 5 ds-hf ( k i 2 3 3 5 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 3 m os f e t ty pic al c har ac t er is it ic s 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 3 6 9 12 15 0 3 6 9 12 15 0 2 4 6 8 10 0 2 4 6 8 0 5 10 15 20 0.6 0.8 1.0 1.2 1.4 1.6 ?50 ?25 0 25 50 75 100 125 150 v g s = 4 . 5 t hr u 2 . 5 v 25 c c r s s c o s s c i s s v d s = 6 v i d = 4 . 0 a v g s = 4 . 5 v i d = 4 . 0 a v g s = 4 . 5 v v g s = 2 . 5 v 1 , 0 . 5 v 125 c 1 . 5 v s c i t s i r e t c a r a h c r e f s n a r t s c i t s i r e t c a r a h c t u p t u o gate charge on-resistance vs. drain current v d s ? drain - t o - s ou r c e v o l t ag e ( v ) ? dra i n curr e n t ( a ) i d v g s ? g a t e - t o - s o u r c e v o l t a g e ( v ) ? dra i n curr e n t ( a ) i d ? g a t e - t o - s our c e v o l t a g e ( v ) q g ? t o t a l g a t e charg e ( n c ) v d s ? drain - t o - s ou r c e v o l t ag e ( v ) c ? capac i t a n c e ( p f ) v gs ? o n-res i s t an c e ( r ds(on) ) i d ? d r a i n c u r r e n t ( a ) capacitance on-resistance vs. junction t emperature t j ? j u n c t i o n t empe r a t u r e ( c) (normalized) ? o n-res i s t an c e ( r ds(on) ) v g s = 1 . 8 v 2 v 0 500 1000 1500 2000 0 3 6 9 12 t c = ? 5 5 c p-cha nne l mo s f e t si2 3 3 5 ds-hf ( k i 2 3 3 5 d s - h f)
s m d ty p e w w w . k e x i n . c o m . c n 4 m os f e t . ty pic al c har ac t er is it ic s ?0.2 ?0.1 0.0 0.1 0.2 0.3 0.4 ?50 ?25 0 25 50 75 100 125 150 i d = 2 5 0 a 1.0 1.2 0.0 0.1 0.2 0.3 0.4 0.5 0 2 4 6 8 0.1 10 20 i d = 4 . 0 a 0.01 0 1 6 12 2 4 10 600 0.1 0.0 0.2 0.4 0.6 0.8 t j = 1 5 0 c threshold v oltage v arian c e ( v ) v gs(th) t j ? t empe r a t u r e ( c) p owe r ( w ) e g a t l o v e c r u o s - o t - e t a g . s v e c n a t s i s e r - n o e g a t l o v d r a w r o f e d o i d n i a r d - e c r u o s single pulse power ? o n-res i s t a n c e ( r ds(on) ) v s d ? v ) v ( e g a t l o v n i a r d - o t - e c r u o s g s ? g a t e - t o - s our c e v o l t a g e ( v ) ? s ourc e curre n t ( a ) i s t im e (s e c ) 8 10 normalized thermal t ransient impedance, junction-to-ambient s qu a r e w a v e p u l s e dur a t io n ( s e c ) norma l i z e d e f f e c t i v e t r a n s i e n t t herma l i mpeda n c e 2 1 0.1 0.01 10 ? 3 10 ? 2 0 0 6 0 1 1 10 ? 1 10 ? 4 d u t y cycl e = 0 . 5 0.2 0.1 0.05 0.02 s ingl e p u l s e 100 100 t a = 2 5 c 1 t j = 2 5 c 1. duty cycle, d = 2. per unit base = r t h j a = 120 c/w 3. t j m ? t a = p d m z t h j a ( t ) t 1 t 2 t 1 t 2 notes: 4. surface mounted p d m p-cha nne l mo s f e t si2 3 3 5 ds-hf ( k i 2 3 3 5 d s - h f)
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